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aft18p350--4s2lr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 63 watt symmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 mhz. ? typical doherty single--carrier w--cdma performance: v dd =28volts, i dqa = 1000 ma, v gsb =1.2vdc,p out = 63 watts avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1805 mhz 16.1 44.5 7.7 --29.8 1840 mhz 16.1 44.3 7.7 --31.6 1880 mhz 15.8 44.1 7.6 --33.0 features ? production tested in a symmetrical doherty configuration ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? in tape and reel. r6 suffix = 150 units, 56 mm tape width, 13--inch reel. 1. device cannot operate with the v dd current supplied through pin 3 and pin 6. document number: aft18p350--4s2l rev. 0, 4/2013 freescale semiconductor technical data 1805--1880 mhz, 63 w avg., 28 v aft18p350--4s2lr6 ni--1230--4ls2l (top view) rf outa /v dsa figure 1. pin connections rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) vbw b (1) 6 3 15 24 carrier peaking ? freescale semiconductor, inc., 2013. a ll rights reserved.
2 rf device data freescale semiconductor, inc. aft18p350--4s2lr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 374 3.2 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 75 ? c, 63 w w--cdma, 28 vdc, i dqa = 1000 ma, v gsb = 1.2 vdc, 1805 mhz r ? jc 0.39 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (4) (v ds =10vdc,i d = 240 ? adc) v gs(th) 1.5 1.9 2.5 vdc gate quiescent voltage (v dd =28vdc,i da = 1000 madc, measured in functional test) v gs(q) 2.3 2.7 3.3 vdc drain--source on--voltage (4) (v gs =10vdc,i d =2.75adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
aft18p350--4s2lr6 3 rf device data freescale semiconductor, inc. table 4 . electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 1000 ma, v gsb =1.2vdc, p out = 63 w avg., f = 1805 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 15.0 16.1 18.0 db drain efficiency ? d 41.0 44.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.2 7.7 ? db adjacent channel power ratio acpr ? --29.8 --27.0 dbc load mismatch (in freescale test fixture, 50 ohm system) i dqa = 1000 ma, f = 1840 mhz vswr 10:1 at 32 vdc, 414 w cw (3) output power (3 db input overdrive from 316 w cw rated power) no device degradation typical performance (2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 1000 ma, v gsb =1.2vdc, 1805--1880 mhz bandwidth p out @ 1 db compression point, cw p1db ? 316 ? w p out @ 3 db compression point (4) p3db ? 394 ? w am/pm (maximum value measured at the p3db compression point across the 1805--1880 mhz bandwidth) ? ? 31 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 75 mhz bandwidth @ p out =63wavg. g f ? 0.4 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.01 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (3) ? p1db ? 0.005 ? db/ ? c 1. part internally matched both on input and output. 2. measurements made with device in a sy mmetrical doherty configuration. 3. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. aft18p350--4s2lr6 figure 2. aft18p350--4s2lr6 test circuit component layout + -- + -- *c5, c6, c21 and c22 are mounted vertically. aft18p350--4s2l rev. 4 cut out area r4 v gga c2 c1 r2 c9 c7c7 c5* c6* c10 c8 z1 r1 c4 c3 r3 v ggb r5 c18 c12 c14 c13 c11 c23 c17 c15 c20 c19 c21* c22* c16 v dda v ddb c p table 5. aft18p350--4s2lr6 test circuit component designations and values part description part number manufacturer c1, c3 10 ? f, 50 v chip capacitors grm31cr61h106ka12l murata c2, c4, c5, c6, c13, c14, c21, c22 12 pf chip capacitors atc100b120jt500xt atc c7, c8, c9, c10 0.3 pf chip capacitors atc100b0r3bt500xt atc c11, c12, c15, c17 10 ? f, 100 v chip capacitors c5750x7s2a106m tdk c16, c18 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp c19 0.5 pf chip capacitor atc100b0r5bt500xt atc c20 0.6 pf chip capacitor atc100b0r6bt500xt atc c23 0.4 pf chip capacitor atc100b0r4bt500xt atc r1 50 ? , 10 w chip resistor cw12010t0050gbk atc r2, r3 2.7 ? , 1/4 w chip resistors crcw12062r70fnea vishay r4, r5 1.8 k ? , 1/4 w chip resistors crcw12061k80fkea vishay z1 1700-2000 mhz band 90 ? , 3 db hybrid coupler x3c19p1-03s anaren pcb 0.020 ? , ? r =3.50 ro4350b rogers
aft18p350--4s2lr6 5 rf device data freescale semiconductor, inc. typical characteristics 1760 acpr f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 63 watts avg. 15 17 16.8 16.6 -- 3 6 47 46 45 44 -- 2 6 -- 2 8 -- 3 0 -- 3 2 ? d , drain efficiency (%) ? d g ps , power gain (db) 16.4 16.2 16 15.8 15.6 15.4 15.2 1780 1800 1820 1840 1860 1880 1900 1920 43 -- 3 4 acpr (dbc) parc v dd =28vdc,p out =63w(avg.),i dqa = 1000 ma v gsb = 1.2 vdc, single--carrier w--cdma figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 200 imd, intermodulatio n distortion (dbc) -- 4 0 im5--u im5--l im7--l im7--u figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 40 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 25 55 70 100 0 60 50 40 30 20 10 ? d ? drain efficiency (%) 85 ? d acpr parc acpr (dbc) -- 3 8 -- 2 6 -- 2 8 -- 3 0 -- 3 4 -- 3 2 -- 3 6 16.3 g ps , power gain (db) 16.2 16.1 16 15.9 15.8 15.7 g ps -- 1 d b = 3 8 w parc (db) -- 2 . 8 -- 2 -- 2 . 2 -- 2 . 4 -- 2 . 6 -- 3 -- 5 g ps 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf im3--l 1 single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obability on ccdf im3--u v dd =28vdc,p out = 84 w (pep), i dqa = 1000 ma v gsb = 1.2 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 1840 mhz -- 2 d b = 5 9 w -- 3 d b = 8 4 w v dd =28vdc,i dqa = 1000 ma v gsb = 1.2 vdc, f = 1840 mhz 100
6 rf device data freescale semiconductor, inc. aft18p350--4s2lr6 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 14.5 17.5 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 17 16.5 10 100 200 10 -- 6 0 acpr (dbc) 16 15.5 15 0 -- 3 0 -- 4 0 -- 5 0 figure 7. broadband frequency response 0 24 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 1000 ma v gsb =1.2vdc 16 12 8 gain (db) 20 4 1500 1600 1700 1800 1900 2000 2100 2200 2300 gain acpr 1805 mhz 1840 mhz 1880 mhz 1840 mhz 1880 mhz 1805 mhz 1840 mhz 1805 mhz 1880 mhz ? d g ps v dd =28vdc,i dqa = 1000 ma v gsb = 1.2 vdc, single--carrier w--cdma 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probabilit y on ccdf
aft18p350--4s2lr6 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dqa = 1276 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1800 1.66 - j4.48 1.68 + j4.49 1.39 - j3.55 17.5 53.6 227 54.5 -11 1840 2.33 - j4.85 2.36 + j5.08 1.47 - j3.87 17.6 53.5 225 53.7 -11 1880 3.53 - j5.49 3.63 + j5.63 1.55 - j4.21 17.6 53.6 229 55.3 -11 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1800 1.66 - j4.48 1.62 + j4.65 1.38 - j3.74 15.3 54.4 276 56.8 -16 1840 2.33 - j4.85 2.35 + j5.32 1.46 - j4.07 15.3 54.4 272 55.5 -16 1880 3.53 - j5.49 3.75 + j6.00 1.57 - j4.37 15.4 54.4 277 57.3 -17 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 8. single side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 1276 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1800 1.66 - j4.48 1.77 + j4.81 3.13 - j2.02 20.4 51.4 139 65.6 -17 1840 2.33 - j4.85 2.56 + j5.32 2.91 - j2.41 20.2 51.6 146 64.2 -16 1880 3.53 - j5.49 3.98 + j5.87 2.61 - j2.54 20.1 51.7 148 65.6 -16 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1800 1.66 - j4.48 1.73 + j4.80 3.06 - j2.93 17.8 52.8 190 67.3 -21 1840 2.33 - j4.85 2.53 + j5.48 2.88 - j2.69 17.9 52.6 183 66.6 -23 1880 3.53 - j5.49 4.06 + j6.19 2.55 - j2.65 18.0 52.5 180 67.8 -24 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of the device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. figure 9. single side load pull performance ? maximum drain efficiency tuning input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. aft18p350--4s2lr6 p1db -- typical load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e power gain drain efficiency linearity output power figure 10. p1db load pull output power contours (dbm) -- 6 real ( ? ) 0 -- 2 imaginary ( ? ) 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 figure 11. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) -- 6 0 -- 2 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 figure 12. p1db load pull gain contours (db) real ( ? ) imaginary ( ? ) -- 6 0 -- 2 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 figure 13. p1db load pull am/pm contours ( ?) real ( ? ) imaginary ( ? ) -- 6 0 -- 2 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 p 49.5 50 50.5 51 51.5 52 52.5 53 e 60 58 56 54 52 50 48 p e 48 62 20.5 21 20 19.5 19 18.5 18 17.5 p e 21.5 -- 1 6 -- 1 4 -- 1 2 -- 1 0 -- 1 8 -- 2 0 -- 2 4 p e -- 2 2 -- 2 6 64
aft18p350--4s2lr6 9 rf device data freescale semiconductor, inc. p3db -- typical load pull contours ? 1840 mhz note: = maximum output power = maximum drain efficiency p e power gain drain efficiency linearity output power figure 14. p3db load pull output power contours (dbm) -- 6 real ( ? ) 0 -- 2 imaginary ( ? ) 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 figure 15. p3db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) -- 6 0 -- 2 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 figure 16. p3db load pull gain contours (db) real ( ? ) imaginary ( ? ) -- 6 0 -- 2 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 figure 17. p3db load pull am/pm contours ( ?) real ( ? ) imaginary ( ? ) -- 6 0 -- 2 2 34 06 -- 1 -- 3 -- 4 5 -- 5 1 p e 50.5 50 51 51.5 52 52.5 53 53.5 54 64 58 56 54 52 p e 62 60 50 66 50 19 18.5 18 17.5 17 16.5 16 15.5 p e 19.5 -- 3 0 -- 2 8 -- 2 6 -- 2 4 -- 2 2 -- 2 0 -- 1 8 -- 1 6 p e -- 3 2
10 rf device data freescale semiconductor, inc. aft18p350--4s2lr6 package dimensions
aft18p350--4s2lr6 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. aft18p350--4s2lr6 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 apr. 2013 ? initial release of data sheet
aft18p350--4s2lr6 13 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2013 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: aft18p350--4s2l rev. 0, 4/2013

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